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| BPW76 Vishay Telefunken Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal is available to enable biasing and sensitivity control. Features D D D D D D D D D Hermetically sealed case Flat window Very wide viewing angle = 40 Exact central chip alignment Long range light barrier with an additional optics Base terminal available High photo sensitivity Suitable for visible and near infrared radiation Selected into sensitivity groups 94 8401 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg Tsd RthJA RthJC Value 80 70 5 50 100 250 125 -55...+125 260 400 150 Unit V V V mA mA mW C C C K/W K/W tp/T = 0.5, tp 10 ms Tamb 25 C x x t x5s Document Number 81526 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 1 (6) BPW76 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Test Conditions IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Symbol V(BR)CE O Min 70 Typ Max Unit V nA pF deg nm nm V ICEO CCEO l = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 W VS = 5 V, IC = 5 mA, RL = 100 W VS = 5 V, IC = 5 mA, RL = 100 W Ee = 1 mW/cm2, lp l0.5 ton toff fc VCEsat 1 6 40 850 620...980 0.15 6 5 110 100 0.3 ms ms kHz Type Dedicated Characteristics Tamb = 25_C Parameter Test Conditions Collector Light Current Ee=1mW/cm2, g l=950nm, VCE=5V Type BPW76A BPW76B Symbol Ica Ica Min 0.4 0.6 Typ 0.6 1.2 Max 0.8 Unit mA mA Typical Characteristics (Tamb = 25_C unless otherwise specified) 800 P tot - Total Power Dissipation ( mW ) I CEO - Collector Dark Current ( nA ) 106 105 104 103 102 101 100 0 94 8342 600 RthJC 400 200 RthJA 0 25 50 75 100 125 150 Tamb - Ambient Temperature ( C ) VCE=20V E=0 20 94 8343 50 100 150 Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (6) Document Number 81526 Rev. 2, 20-May-99 BPW76 Vishay Telefunken 3.5 I ca rel - Relative Collector Current 3.0 2.5 2.0 1.5 1.0 0.5 0 0 94 8344 C CEO - Collector Emitter Capacitance ( pF ) 20 16 f=1MHz VCE=5V Ee=1mW/cm2 l=950nm 12 8 4 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) 50 100 150 94 8247 Tamb - Ambient Temperature ( C ) Figure 3. Relative Collector Current vs. Ambient Temperature t on / t off - Turn on / Turn off Time ( m s ) 10 Ica - Collector Light Current ( mA ) Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage 12 10 8 6 4 2 0 ton VCE=5V RL=100W 1 l=950nm 0.1 VCE=5V 0.01 l=950nm toff 0.001 0.01 94 8345 0.1 Ee - Irradiance ( 1 mW / cm2 ) 10 94 8253 0 4 8 12 16 IC - Collector Current ( mA ) Figure 4. Collector Light Current vs. Irradiance 1 Ica - Collector Light Current ( mA ) BPW 76 A Ee=1 mW/cm2 0.5 mW/cm2 Figure 7. Turn On/Turn Off Time vs. Collector Current S ( l ) rel - Relative Spectral Sensitivity l=950nm 1.0 0.8 0.6 0.4 0.2 0 400 0.2 mW/cm2 0.1 0.1 mW/cm2 0.05 mW/cm2 0.01 0.1 1 10 100 600 94 8346 VCE - Collector Emitter Voltage ( V ) 94 8348 l - Wavelength ( nm ) 800 1000 Figure 5. Collector Light Current vs. Collector Emitter Voltage Figure 8. Relative Spectral Sensitivity vs. Wavelength Document Number 81526 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 3 (6) BPW76 Vishay Telefunken 0 10 20 30 S rel - Relative Sensitivity 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8347 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement www.vishay.de * FaxBack +1-408-970-5600 4 (6) Document Number 81526 Rev. 2, 20-May-99 BPW76 Vishay Telefunken Dimensions in mm 96 12175 Document Number 81526 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 5 (6) BPW76 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 6 (6) Document Number 81526 Rev. 2, 20-May-99 |
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